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04/05/2017: Inelastic Electron Tunneling using the Scanning Tunneling Microscope

PhD Course in Materials Science and Nanotechnology

Event details

When

May 04, 2017
from 02:30 to 02:30

Where

Seminar room, 1st Floor, U5 Building

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Author: Gérald Dujardin - Institut des Sciences Moléculaires d’Orsay (ISMO), Université Paris-Sud, France

 

Title: Inelastic Electron Tunneling using the Scanning Tunneling Microscope

 

 

Abstract

The Scanning Tunneling Microscope (STM) is extensively used to image surfaces and adsorbates on surfaces with a true atomic-scale resolution. In this case, electrons tunnel elastically through the barrier between the STM tip and the surface. However, electrons can also tunnel inelastically by releasing a part of their energy in the tunnel barrier. Such Inelastic Electron Tunneling (IET) can be used to inject energy into a single atom or molecule. This can activate a large variety of optical, electronic, dynamical and chemical processes at the atomic-scale. This can also provide vibrational spectroscopy, Raman spectroscopy and spin spectroscopy at the level of a single molecule. Very recently, fascinating studies of single molecule luminescence have been performed.
However, the exact mechanisms for inelastic electron tunneling are far from being fully understood. This understanding is crucial to optimize the efficiency of inelastic electron tunneling, thus providing new methods to control light and matter at the nanoscale.

 

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