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Materials and Spectroscopies for Nanoelectronics and Spintronics MSNS Laboratory

Marco Fanciulli

The research is mainly devoted to the experimental investigation of semiconductors, oxides, interfaces and silicon and germanium nanostructures for advanced and innovative nanoelectronic and spintronic devices. The research activity is carried out in strong collaboration with the CNR-IMM, MDM Laboratory and leading semiconductor industries, Micron and STMicroelectronics.


Study of the electronic properties of point defects in semiconductors (Si, Ge) and in high dielectric constant materials (transition metal oxides) using electron spin resonance techniques and inelastic electron tunneling spectroscopy.


Investigation of silicon/oxide, germanium/oxide interfaces using electrically detected magnetic resonance (EDMR) and inelastic electron tunneling spectroscopy (IETS).

In-situ investigation by EDMR of the early stages of oxidation and interface formation at the Si/oxide and Ge/oxide interfaces.


The electronic and spintronic properties of the following nanostructures:

  • Silicon nanowires produced by e-beam lithography and oxidation;
  • Silicon nanowires produced by metal-assisted chemical etching (MACE).
Silicon and germanium nanowires and nanoclusters produced by CVD and MBE are investigated using mainly spin dependent transport techniques aiming at the characterization of shallow donors and electrostatically confined electrons.

Fanciulli - figura 1

Figure 1. Left: electron spin resonance (ESR) lab. Up-right: processing lab. Bottom-right: Atomic layer deposition with in-situ EPR


Growth and processing:

  • Atomic Layer Deposition (ALD) mini-chamber with O3 line for in-situ characterization.
  • Horizontal and vertical furnaces for annealing and diffusion.
  • Q-switched Ruby laser for laser annealing.


  • Three CW X-band systems for electron spin resonance (ESR) spectroscopy, electrically detected spin resonance spectroscopy (EDMR) and electron nuclear double resonance spectroscopy (ENDOR). Variable temperature measurements (4-600 K).
  • Multi-frequency (0.1-40 GHz) EDMR.
  • Set-up for inelastic electron tunneling spectroscopy (IETS) working in the temperature range 4-300 K.

Fanciulli - figura 2

Figure 2. Left: electron spin resonance (ESR) spectrum of bismuth donors in Ge. Center: single Si nanowire (SiNW) produced by metal assisted chemical etching. As etched SiNWs are shown in the inset. Right: angular resolved ESR spectra of donors and interface paramagnetic centers in SiNWs