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Modeling and simulations of epitaxial semiconductor depositions and nanostructures

Leo Miglio, Emilio Scalise, Francesco Montalenti

Deposition of Ge (or, of SiGe alloys) on Si leads to a wealth of different phenomena, mostly caused by the elastic energy unavoidably accumulated when trying to epitaxially grow one material (Ge) on a substrate (Si) with a different lattice parameter. In our group, we investigate such phenomena by formulating interpretative models based on computer simulations.

For example, we are interested in understanding strain-release triggered formation, stability, morphological evolution, and ordering of Ge nanostructures (islands), including the effect of Si/Ge intermixing. A combination of different methods is needed to achieve this goal. If atomistic Kinetic Monte Carlo and/or continuum models are needed to describe growth kinetics, thermodynamic aspects can be tackled by a synergic use of Density Functional Theory, providing surface energies,  and classical molecular dynamics simulations or elasticity theory (numerically solved by Finite Element Methods), used to establish the volumetric elastic energy.

Modeling and simulations of epitaxial semiconductor depositions and nanostructures

Particular attention is also dedicated to understanding the onset of plastic relaxation (injection of misfit dislocations) both in flat SiGe/Si films and in SiGe 3D islands, and its competition with elastic relaxation. To this goal, we developed a suitable methodology to treat extended defects within a continuum approach.

Lately most of our attention has been focused on exploiting suitable patterning of a Si(001) substrate to obtain ordered arrays of islands and/or to influence dislocation nucleation, confining defects in desired positions. We have discovered that on a suitably pit-patterned substrate, very peculiar processes take place, leading to an extra-relaxation (with respect to the flat substrate case) of nanoislands, with important consequences also on the onset of plastic relaxation.

Our connection with experiments is extremely tight: we work in very close collaboration with several international groups, and most of our representative works are jointly published with them, offering at the same time both experimental evidence and theoretical interpretation of a given phenomenon.

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20-21/11/2017: Italian Crystal Growth 2017 (ICG2017) Nov 20, 2017 - Nov 21, 2017 — U4 Building, Room 08, Piazza della Scienza, 4 20126 – Milano, Italy
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