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Optical spectroscopy and fabrication of semiconductors and semiconductor quantum structures

Emiliano Bonera, Emanuele Grilli, Mario Guzzi, Fabio Pezzoli, Stefano Sanguinetti

Our research is mainly devoted to the experimental study of the optical properties of both group IV and group III-V semiconductors and quantum structures of interest for micro- and opto-electronics. Most of our research is carried out in within the L-NESS interuniversity Centre.


SiGe alloys are of fundamental and applicative interest due to their structural, chemical and electronic characteristics, for applications in microelectronics and photonics.

  • Using Raman and photoluminescence we study the correlations between growth conditions and system properties. We analyse the effects of strain, composition and dimensionality on the vibrational and electronic properties of the heterostructures.
  • The vibrational properties of SiGe nanostructures, mainly quantum dots, are currently under study by Raman and micro-Raman measurements.
  • The electronic properties of Ge/SiGe multiple quantum wells are studied by transmission and photoluminescence measurements in a wide temperature range.
  • Electron spin sensitive measurements on Ge/SiGe structures are performed; the photoluminescence with light polarization control is studied.





Amongst the  nanoscience advancements,  relevant place is taken by quantum confinement effects that take place in semiconductor quantum dots (QDs). Like the natural atoms QDs show discrete energy levels. Laser, infrared photodetectors, as well as third generation photovoltaic cells show can be improved by the use of QDs in the active layer. The study of QD-based devices has provided new ways for the understanding of strongly correlated few electrons/excitons systems and their possible applications, such as single-electron devices and single photon emitters for quantum cryptography and computation.

  • We develop innovative growth procedures for the fabrication quantum nanostructures with ad-hoc designed electronic properties;
  • We study the nanostructure properties via spectroscopic measurements addressing electronic structure and carrier relaxation mechanisms;
  • We study the transfer of the III-As QD devices on Si for integration with standard electronics.


Spectroscopic apparatuses based on dispersive and FT spectrometers are used for photoluminescence, photoluminescence excitation, transmission and Raman measurements in the 0.4 - 5.0 eV spectral range. Raman spectroscopy can be operated down to 5 cm-1. Working temperatures: 2 K to 450 K. Sources: He-Ne, Ar, doubled-Ar, Ti-Sapphire, DPSS and Diode lasers, incandescent and high pressure lamps. A low temperature (4 K – 300 K) micro-photoluminescence and micro-Raman apparatus working in the 0.75 – 3.4 eV spectral range is available. Time resolved photoluminescence and photoluminescence decay down to 10-8 s can be measured with DPSS-QS lasers. Molecular-beam epitaxy for III-V semiconductors and AFM characterization.

Upcoming Events
20-21/11/2017: Italian Crystal Growth 2017 (ICG2017) Nov 20, 2017 - Nov 21, 2017 — U4 Building, Room 08, Piazza della Scienza, 4 20126 – Milano, Italy
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