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Dario Narducci

Associate professor

Via Roberto Cozzi, 55
tel.: 02.6448.5137

e-mail: dario.narducci@unimib.it
web page: www.mater.unimib.it/utenti/narducci

Curriculum Vitae

Dario Narducci graduated in Chemistry at the University of Milan in 1984. In 1985 he won a one-year grant by 3M Italy, Research Division, to study luminescent materials. From 1985 to 1988 he was a Ph.D. student in Chemistry at the University of Milan, where he worked in the area of solid state physical chemistry, also visiting the Physics Laboratory of the University of Amsterdam (The Netherlands) where he worked in the field of electron spin resonance of defects and impurities in silicon. From 1988 to 1990 he was Post Doctoral Fellow at the IBM Thomas J. Watson Research Center in Yorktown Heights, NY (USA) carrying out research in the field of semiconducting diamond. In 1990 he became Assistant Professor at the University of Milan, Department of Physical Chemistry and Electrochemistry, moving to the Department of Materials Science, University of Milano Bicocca, in 1997. Dario Narducci became Associate Professor of Physical Chemistry in 2000.

Teaching

Dario Narducci currently teaches Physical Chemistry in the BS degree course in Materials Science; and Advanced Physical Chemistry in the MS degree course in Chemistry.

Research

Research experience has crossed diverse fields of materials science, still retaining two hallmarks – transport processes and surfaces. Moving from an initial interest to conduction processes in disordered semiconductors and dielectrics (polycrystals, glasses, and amorphous systems), investigations have invested gas sensing in semiconducting thin films, landing more recently to the analysis of gas-surface interactions at silicon surfaces modified by grafting of organic and bio-organic moieties. In parallel, research effort on materials for energy spanned from photovoltaic silicon to thermoelectricity. As major achievements, a quantitative model for the analysis of electrical conductivity in gas sensing oxides and of a theory of energy filtering in composites were developed. Currently, his research activity mostly focuses on the development of novel strategies for enhanced thermoelectric generation using nanostructured silicon; and biosensing using silicon nanowires.

Dario Narducci was a founding member of the Scientific Board of the Nanotechnology Inter-University Center of Como (L-NESS) and of the Babbage Project (SISSA, Trieste). Author of more than one hundred scientific publications, he is also the author of a book on Nanotechnologies and of fifteen patents as well.

Main Publications

(last five years)

  1. M. Bollani, J. Osmond, G. Nicotra, C. Spinella, and D. Narducci, Strain–Induced Generation of Silicon Nanopillars, Nanotechnology, 24 (2013) 335302 (UK).
  2. Y.-L. Khung, D. Narducci, Synergizing nucleic acid aptamers with 1-dimensional nanostructures as label-free field-effect transistor biosensors, Biosensors and Bioelectronics, 50 (2013) 278 (Netherlands).
  3. D. Narducci, G.F. Cerofolini, M. Ferri, F. Suriano, F. Mancarella, L. Belsito, Solmi, and A. Roncaglia, Phonon scattering enhancement in silicon nanolayers, Journal of Materials Science, 48 (2013) 2779 (Germany).
  4. N. Neophytou, X. Zianni, M. Ferri, A. Roncaglia, G. F. Cerofolini, and D. Narducci, Nanograin effects on the thermoelectric properties of poly-Si nanowires, Journal of Electronic Materials, 42 (2013) 2393 (USA).
  5. N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, and D. Narducci, Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si, Nanotechnology, 24 (2013) 205402 (UK).
  6. G.F. Cerofolini, F. Corni, S. Frabboni, G. Ottaviani, E. Romano, R. Tonini, and D. Narducci, Using evidence from nanocavities to assess the vibrational properties of external surfaces, Journal of Physics Condensed Matter, 24 (2012) 104005 (UK).
  7. D. Narducci, E. Selezneva, G.F. Cerofolini, S. Frabboni, and G. Ottaviani, Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors, Journal of Solid State Chemistry, 193 (2012) 19 (Netherlands).
  8. G.F. Cerofolini, F. Corni, S. Frabboni, G. Ottaviani, E. Romano, R. Tonini, and D. Narducci, Using evidence from nanocavities to assess the vibrational properties of external surfaces, Journal of Physics Condensed Matter, 24 (2012) 104005 (UK).
  9. D. Narducci, Electric Power Output Optimization in Seebeck generators: Beyond high ZT, AIP Conference Proceedings, 1449 (2012) 532 (USA).
  10. D. Narducci, E. Selezneva, G.F. Cerofolini, S. Frabboni, and G. Ottaviani, High Figures of Merit in Degenerate Semiconductors. Energy Filtering by Grain Boundaries in Heavily Doped Polycrystalline Silicon, AIP Conference Proceedings, 1449 (2012) 311 (USA).
  11. D. Narducci, Electric Power Output Optimization in Seebeck generators: Beyond high ZT, AIP Conference Proceedings, 1449 (2012) 532 (USA).
  12. G.F. Cerofolini, M. Ferri, E. Romano, F. Suriano, G.P. Veronese, S. Solmi, and D. Narducci, Crossbar architecture for tera-scale integration, Semiconductor Science and Technology, 26 (2011) 045005 (UK).
  13. D. Narducci, Biosensing at the nanoscale: There's plenty of room inside, Science of Advanced Materials, 3 (2011) 426-435 (USA).
  14. M. Ferri, F. Suriano, A. Roncaglia, S. Solmi, G.F. Cerofolini, E. Romano, and D. Narducci, Ultradense silicon nanowire arrays produced via top-down planar technology, Microelectronic Engineering, 88 (2011) 877-881 (Netherlands).
  15. G.F. Cerofolini, D. Narducci, E. Romano, L. Baldi, and S. Carrara, A special issue on nanoengineered silicon: Technology and applications, Science of Advanced Materials, 3 (2011) 297-300 (USA).
  16. G.F. Cerofolini, L. Baldi, S. Carrara, D. Narducci, and E. Romano, Nanoengineered silicon: Technology and applications, Science of Advanced Materials, 3 (2011) 301-311 (USA).
  17. D. Narducci, Do we really need high thermoelectric figures of merit? A critical appraisal to the power conversion efficiency of thermoelectric materials, Applied Physics Letters, 99 (2011) 102104 (USA).
  18. D. Narducci, Thermodynamic Efficiency, Power Output and Performance Indices of Classic and Nanostructured Thermoelectric Materials, Journal of Nanoengineering and Nanomanufacturing, 1 (2011) 63-70 (USA).
  19. G.F. Cerofolini, E. Romano, and D. Narducci, Chimaera – A New Threefold Functionalized Nanostructured Agent in Cancer Therapy, Journal of Nanoengineering and Nanomanufacturing, Vol. 1, pp. 50-62, 2011
  20. G. F. Cerofolini, E. Romano,  D. Narducci, P. Belanzoni and G. Giorgi, ‘Assigning chemical configurations to the XPS features observed at pristine (100) Si surface resulting after etching in HF aqueous solution’, Applied Surface Science, 256 (2010) 6330-6339 (Netherlands).
  21. E. Romano, G.F. Cerofolini, D. Narducci, F. Corni, S. Frabboni, G. Ottaviani, and R. Tonini, ‘A tool for the spectroscopic investigation of hydrogen-silicon interaction’, Surface & Interface Analysis, 42 (2010) 1307 (USA).
  22. E. Romano, G.F. Cerofolini, D. Narducci, C. Galati, and L. Renna, ‘Comparing the IR spectra of H-terminated inner and outer silicon surfaces’, Surface & Interface Analysis42 (2010) 1321 (USA).
  23. G.F. Cerofolini, E. Romano, D. Narducci, F. Corni, S. Frabboni, G. Ottaviani, and R. Tonini, ‘Adsorption equilibria and kinetics of H2 at nearly ideal (2´1) Si(100) inner surfaces’, Surface Science, 604 (2010) 1215 (Netherlands).
  24. G.F. Cerofolini, M. Ferri, E. Romano, F. Suriano, G.P. Veronese, S. Solmi, and D. Narducci, ‘Tera scale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires’, Semiconductor Science & Technology, 25 (2010) 095011 (UK).
  25. E. Di Vita and D. Narducci, ‘Sputter-induced damages and impurity effects on oxidized and grafted silicon surfaces’, Thin Solid Films, 517 (2009) 1944-1948 (Netherlands).
  26. E. Romano, D. Narducci, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, and G. F. Cerofolini, ‘Nanocavities in silicon: an infrared investigation of internal surface reconstruction after  hydrogen implantation’, Materials Science & Engineering B, 159-160 (2009) 173-176 (Netherlands).
  27. G. F. Cerofolini, E. Romano, D. Narducci, F. Corni, S. Frabboni, G. Ottaviani, and R. Tonini, ‘Hydrogen injection and retention in nanocavities of single-crystalline silicon’, Journal of Physics D: Applied Physics, 42 (2009) 062001 (UK).
  28. E. Romano, G.F. Cerofolini, D. Narducci, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, ‘Evidence for H2 at high pressure in the silicon nanocavities after dipping in HF solutions’, Surface Science, 603 (2009) 2188-2192 (Netherlands).
  29. A. Le Donne, M. Acciarri, D. Narducci, S. Marchionna and S. Binetti, ‘Encapsulating Eu3+ Complex Doped Layers to Improve Si-based Solar Cell Efficiency’, Progress In Photovoltaics: Research and Applications, 17 (2009) 519-525 (USA).
  30. G.F. Cerofolini, A. Giussani, A. Modelli, D. Mascolo, D. Ruggiero, D. Narducci, and E. Romano, ‘Chemical, energetic, and geometric heterogeneity of device-quality (1 0 0) surfaces of single crystalline silicon after HFaq etching’, Applied Surface Science, 254 (2008) 5781-5790 (Netherlands).
  31. G. F. Cerofolini, D. Narducci, P. Amato, and E. Romano, ‘Fractal Nanotechnology’, Nanoscale Research Letters, 3 (2008) 381-385 (USA).

Projects & Contracts

Dario Narducci has an extensive record of projects he led or participated in, including two National Research Projects, three Research Projects of National Interest, and a European Communities project in the frame of the IV Framework Programme. He was also the project leader of three privately-funded projects on gas detection systems and of several SME-funded research projects. Since 2010 Dario Narducci is Chief Technical Officer and Board Member of a spin-off aimed at the development of thermoelectric generators for energy harvesting.

Memberships

Dario Narducci is a member of the National Inter-University Consortium for Material Science (CNISM), of the Materials Research Society, of the American Chemical Society, and of the Italian Chemical Society.

Patents

  1. J.J. Cuomo and D. Narducci, ‘Non-Destructive Method for Measuring Peeling Energies Using Dielectric Spectroscopy’, IBM Technical Disclosure Bulletin, 33 (1990) 415-416 (USA).
  2. D. Narducci, ‘Sensore di Gas’, ITRM2005A000082(A1) (25 febbraio 2005).
  3. D. Narducci, ‘Metodo perfezionato per analisi gas-cromatografiche e relativa apparecchiatura’, ITRM2005A000084(A1) (25 febbraio 2005).
  4. D. Narducci, ‘Metodo e dispositivo per rilevare fughe di gas odorizzato’, ITRM2005A000081(A1) (25 febbraio 2005).
  5. D. Narducci, ‘Sensore di nitroderivati aromatici’, ITRM2005A000083(A1) (25 febbraio 2005).
  6. C. Alippi, D. Narducci e M. Saini Fasanotti, ‘Metodo di classificazione e classificatore statistico per attuare il metodo’, ITVE2006A000058(A1) (21 settembre 2006).
  7. D. Narducci, ‘Electric Device For Determining Aeriform Substances’, WO089719(A1) – EP1856515(A1) – US2006191791(A1) – JP2006191791(A1) – CA2537561(A1) (31 agosto 2006).
  8. D. Narducci, ‘Metodo di ignifugazione di materiale ligneo’, ITVE2006A000083(A1) (27 dicembre 2006).
  9. M. Oldani, A. Bernardi and D. Narducci, ‘Gas sensor comprising a gas sensitive cyclodextrin layer covalently bonded to a semiconducting substrate and method for its preparation’, WO2009000661(A1) – VE2007A000041 (27 giugno 2007).
  10. D. Narducci, ‘Seebeck/Peltier bidirectional thermo-electric conversion device using nanowires of conductor or semiconductor material’, WO2009125317(A2)-ITRM20080193(A1) (11 aprile 2008)
  11. D. Narducci, G.F. Cerofolini, ‘Dispositivo di conversione termo-elettrica ad effetto Seebeck/Peltier impiegante strutture di materiale semiconduttore trattato non richiedente definizione su scala nanometrica’, ITVA2009A000050 (15 luglio 2009).
  12. D. Narducci, G. F. Cerofolini, ‘Seebeck/Peltier thermoelectric conversion element with parallel nanowires of conductor or semiconductor material organized in rows and columns through an insulating body and process’, ITVA2009A000082 EP2513988 (15 dicembre 2009).
  13. D. Narducci, ‘Metodo per la protezione di superfici di argento e sue leghe dall'imbrunimento’, ITVE2010A000008 − PCT/IB2011/000369  (24 febbraio 2010).
  14. D. Narducci, G.F. Cerofolini, ‘Seebeck/Peltier Thermoelectric Conversion Device Employing Treated Films of Semiconducting Material Not Requiring Nanometric Definition’, PCT/IB2010/001729 (July 14, 2010).
  15. D. Narducci e G.F. Cerofolini, ‘Dispositivo di conversione termoelettrica Seebeck/Peltier impiegante strati nanometrici impilati alternati di materiale conduttore e dielettrico e procedimento di fabbricazione’, MI2011A000751 (4 aprile 2011).
  16. D. Narducci e G.F. Cerofolini, ‘Dispositivo di conversione termoelettrica Seebeck/Peltier avente strati di semiconduttore cristallino di confinamento di fononi contenenti gruppi organici Angstrom-dimensionali quali sostituenti di atomi di semiconduttore nei domini cristallini e procedimento di fabbricazione’, MI2011A001558 (30 agosto 2011).
  17. D. Narducci e G.F. Cerofolini, ‘Dispositivo Seebeck-Peltier a base di un semiconduttore policristallino degenere in cui è presente una seconda fase ricca di drogante’, MI2011A002047 (11 novembre 2011).
  18. G.F. Cerofolini e D. Narducci, ‘Componenti microelettronici, in particolare circuiti CMOS, comprendenti elementi termoelettrici di raffreddamento ad effetto Seebeck/Peltier, integrati nella loro struttura’,  RM2011A000472 (9 settembre 2011).
  19. G.F. Cerofolini, D. Narducci e E. Romano, ‘Nanotori of semiconductor material for use in diagnostics and in the anti-tumor therapy and process for the production thereof’,  PCT/IT2011/000110, WO2012140680 (12 aprile 2011).
  20. D. Narducci, ‘Method for protecting silver and silver alloy surfaces against tarnishing’, WO2011IB00369 2011-09-01 (priority date 2010-02-24)
  21. D. Narducci e G.F. Cerofolini, ‘Seebeck/Peltier thermoelectric conversion device employing a stack of alternated nanometric layers of conductive and dielectric material and fabrication process’, US2012279542 (A1) 2012-11-08 (priority date 2011-05-04)
  22. D. Narducci e G.F. Cerofolini, ‘Seebeck/Peltier thermoelectric conversion device employing treated films of semiconducting material not requiring nanometric definition’, US2012174954 (A1) 2012-07-12 (priority date 2009-07-15)

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