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Emiliano Bonera

Associate professor

Dipartimento di Scienza dei Materiali
Università degli Studi Milano-Bicocca
via R. Cozzi 55, 20125, Milano, Italy

tel+39.026448.5033 fax+39.026448.5400

Curriculum Vitae

Emiliano Bonera graduated in Physics at the University of Pavia in 1998 after being also an exchange student at the University of Strathclyde in Glasgow. The topic of his dissertation was near-field microscopy. He obtained his PhD in Physics in 2002 from the University of Leeds with a thesis about micro and near-field optical characterisation of microelectronic materials. After two years working as a post-doctoral fellow at the Material and Devices for Microelectronics Laboratory, a government lab within the industrial site of STMicroelectronics, he became there in 2004 a research associate. His mission in MDM was to setup and follow optical characterisation facilities. From 2007 he joined the University of Milan Bicocca as a researcher.
His interests spanned mainly on Raman and photoluminescence spectroscopy, internal photoemission spectroscopy, infrared spectroscopy, and near-field optical microscopy. He applied these techniques to the study of semiconductors, insulators, nanoclusters, high-k materials, and other microelectronic-related issues.


Materials Physics Laboratory

Introduction to Semiconductors

Optics and Ophtalmics Systems


Optical spectroscopy of semiconductors and semiconductor nanostructures.

Main Publications

  • Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor Emiliano Bonera, Riccardo Gatti, Giovanni Isella, Gerd Norga, Andrea Picco, Emanuele Grilli, Mario Guzzi, Michaël Texier, Bernard Pichaud, Hans von Känel and Leo Miglio Appl. Phys. Lett. 103, 053104 (2013).
  • Substrate strain manipulation by nanostructure perimeter forces E. Bonera, M. Bollani, D. Chrastina, F. Pezzoli, A. Picco, O. G. Schmidt and D. Terziotti J. Appl. Phys. 113, 164308 (2013).
  • Lithographically defined low dimensional SiGe nanostripes as silicon stressors M. Bollani, D. Chrastina, M. Fiocco, V. Mondiali, J. Frigerio, L. Gagliano and E. Bonera J. Appl. Phys. 112, 094318 (2012) .
  • Phonon strain shift coefficients in Si1−xGex alloys F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl and G. Bauer J. Appl. Phys. 103, 093521 (2008).
  • Band alignment at the La2Hf2O7/(001)Si interface G. Seguini, S. Spiga, E. Bonera, M. Fanciulli, A. Reyes Huamantinco, C. J. Förs , C. R. Ashman, P. E. Blöchl, A. Dimoulas and G. Mavrou Appl. Phys. Lett. 88, 202903 (2006).
  • Atomic-layer deposition of Lu2O3 G. Scarel , E. Bonera, C. Wiemer, G. Tallarida, S. Spiga, M. Fanciulli, I. L. Fedushkin, H. Schumann, Yu. Lebedinskii and A. Zenkevich Appl. Phys. Lett. 85, 630 (2004).
  • Combining high resolution and tensorial analysis in Raman stress measurements of silicon Emiliano Bonera, Marco Fanciulli and David N. Batchelder J. Appl. Phys. 94, 2729 (2003).
  • Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers M. Perego, S. Ferrari, S. Spiga, E. Bonera, M. Fanciulli and V. Soncini Appl. Phys. Lett. 82, 121 (2003).
  • Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon Emiliano Bonera, Marco Fanciulli and David N. Batchelder Appl. Phys. Lett. 81, 3377 (2002).


L-NESS Inter-University Center

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