8^th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces

Program of ESPS-NIS

Provisional program, updated on the 16^th of June 2010; download ESPS-NIS-Program.pdf

Invited talks are 25 minutes plus 5 minutes for questions, contributed talks are 15 minutes plus 2 minutes for questions.

Monday evening:

16:30	Registration at the Palazzo Natta
18:00	Apéritif at the Palazzo Natta

Tuesday:

09:00	Introduction from Leo Miglio
09:15	Session: Novel Patterning Techniques
	Harun H. Solak Fabrication of growth and assembly substrates by extreme ultraviolet interference lithography (invited) Tino J. Pfau Optimization of wet-chemical pre-patterning for site-controlled quantum dot growth Andrea Cattoni Soft UV-NIL at 20 nm scale with flexible mold from Si master fabricated with hydrogen silsequioxane I. C. Marcus Self assembled Ge nanostructures grown on FIB nanopatterned Si substrates
10:45	Coffee break
11:15	Session: Nanowires I
	Magnus T. Borgström Nanowires with promise for photovoltaics, growth and characterisation (invited) K. Sladek Comparison of growth behavior for undoped and Si-doped GaAs and InAs nanowires deposited by selective area MOVPE
12:30	Lunch buffet
13:30	Session: Nanowires II
	Erik P. A. M. Bakkers Periodic nanowire structures (invited) K. Kishino Stimulated emission at green wavelength of InGaN-based nanocolumn arrays grown on Ti-mask patterned GaN template T. U. Schülli Catalysts for semiconductor nanowires: island formation, epitaxy and solid-liquid transition on Si(001) and Si(111) surfaces
	Session: Bottom-up Patterning
	S. Kumar Direct laser writing of nanoscale light emitting diodes in (Ga, Mn)As/GaAs heterostructures L. González Vertical Quantum Dot Molecules grown by Droplet Epitaxy A. Urbańczyk In nanocrystals: ordered arrays and quantum dot formation
16:00	Tea break
16:30	Poster session
	Takashi Toujyou Site-control growth of InAs nano-dot on GaAs(001) by STMBE F. Saidi Growth rate effects on optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy L. Bouzaïene Effect of substrate temperature and As/In ratio on InAs critical thickness grown on GaAs (115)A by molecular beam epitaxy K. Král Electron transfer between zero-dimensional quantum nanostructures T. Teraoka Nanohole formation on GaAs (001) by Ga droplets revealed from in-situ STM observation Sang-Woo Kim Controlled growth of CdS nanostructures in a chemical vapor deposition process Sang-Woo Kim Hybrid bulk heterojunction solar cells with ZnO nanorods F. Hackl Narrow photoluminescence emission of Ge islands grown on pit-patterned Si(001) substrates at various temperatures T. V. Hakkarainen Lateral ordering of InAs quantum dots on cross-hatch patterned GaInP R. Ferragut Defect characterization in SiGe/SOI epitaxial semiconductor by positron annihilation A. Jamil High quality positioned InAs quantum dots grown on patterned GaAs (100) substrates M. Nemoz High resolutions x-ray diffraction of (11-22) InGaN films and (11-22) InGaN/GaN quantum wells Gang Chen Enhanced intermixing in Ge nano-prisms on groove patterned Si (1 1 10) substrate M. Bollani Ordered arrays of SiGe islands from low-energy PECVD E. Bonera Ultrathin body silicon-on-insulator with an epitaxial Si1-xGex stressor E. Gomes Si substrate nanostructuring using mass-filtered focused ion beam with Si and Au ions M. Aouassa Self-organisation of Si nanodroplets by dewetting of ultra-thin crystalline and amorphous SOI Davide Colombo Suspended Ge layers grown on patterned Si substrates Jong Su Kim Fabrication of InAs quantum dots on GaAs (111)A surface and their optical properties S. Bietti Self assembled Local Artificial Substrates of GaAs on Si substrate Claudio Somaschini Control of the lateral growth morphology in GaAs droplet epitaxy Francesca Boioli Plastic relaxation delay in SiGe islands grown on pit-patterned Si(001) substrates Riccardo Gatti Dislocation Engineering in SiGe Heteroepitaxial Film on Nanopatterned Si (001) Substrates R. Bergamaschini Optimal growth conditions for selective Ge islands positioning on pit-patterned Si(001)
18:00	Apéritif

Wednesday:

09:00	Session: Novel Index Surfaces I
	Kouichi Akahane Highly stacked and highly ordered InAs quantum dots grown on InP(311)B substrate (invited) N. Kriouche Filtering of defects in semipolar (11-22) GaN on m-plane sapphire using 2-steps lateral epitaxial overgrowth Marco Abbarchi Fine structure splitting reduction in self–assembled GaAs quantum dots grown on AlGaAs (111)A surface by droplet epitaxy Tomoya Konishi Statistical analysis of surface reconstruction domains and quantum dot-forming patten on InAs wetting layer
10:45	Coffee break
11:15	Session: Novel Index Surfaces II
	Takaaki Mano Self-Assembly of GaAs Quantum Dots on (n11) (n=0, 1, 3) Substrates by Droplet Epitaxy (invited) Emanuele Uccelli InAs Quantum Dot arrays obtained on the side facets of GaAs Nanowire by Molecular Beam Epitaxy M. Brehm Inverted Ge islands in {111}-faceted Si pits - an approach towards islands with higher aspect ratio B. Sanduijav STM study of successive Ge growth on “V”-stripe patterned Si (001) surfaces at different growth temperatures
12:30	Lunch buffet
14:00	Excursion: Boat trip on Lake Como
17:30	Tour of L-NESS in Via Anzani
19:30	Social dinner at the Trattoria dei Combattenti

Thursday - exhibition:

09:00	Session: Patterning for Nanostructures I
	Shiro Tsukamoto Quantum structures formed by atomistic selective growth: From artificial to self-organized patterned substrates (invited) A. Surrente Growth mechanism and optical properties of dense array of ordered quantum dots N. Gogneau Site-controlled InAs/InP quantum dots grown by selective area MOVPE growth for single photon source applications A. González-González Morphology analysis of Si island arrays on Si(001) E. Lausecker UV nanoimprint lithography for large-area site-controlled growth of Si/Ge islands
10:45	Coffee break
11:15	Session: Patterning for Nanostructures II
	P. Atkinson Site controlled InAs quantum dots on ex-situ patterned substrates (invited) D. Fekete MOVPE grown InGaAsN/GaAs Quantum Wires and Quantum Wells emitting at 1.3μm J. Skiba-Szymanska Record narrow emission linewidths from positioned quantum dots J. A. Floro Templated Self-Assembly of GeSi Quantum Dots Using Focused Energetic Beams to Generate Surface Patterns
12:30	Lunch buffet
13:30	Session: Graphene Epitaxy
	Jae-Young Choi Transfer of large-area graphene by roll-to-roll lamination and device applications (invited) Hirokazu Fukidome Viability of Graphene-on-Silicon Technology toward fusion of Graphene with Advanced Si-CMOS Technologies Sang-Woo Kim Rollable transparent nanogenerators based on ZnO nanorod-graphene heterostructures Elisa Riedo Nanoscale Tunable Reduction of Graphene Oxide for Graphene Electronics Kang Wang Nanoscale materials enabling nonvolatile electronics
15:30	Tea break
16:00	Exhibitors' presentations
17:15	Continuation of Poster session and presentation of poster prize
17:45	Concert
18:30	Apéritif

Friday:

09:00	Session: SiGe Dots I
	G. Springholz Unique growth properties of Ge on high-indexed Si (1 1 10) surfaces (invited) J. J. Zhang Strain engineering in Si by deposition of ordered SiGe islands on patterned Si(001) substrates G. Chen Phase transition from prism to dome for Si1-xGex on Si (1 1 10) substrate I. Berbezier Electrical, optical and structural properties of self-organized Ge nanocrystals
10:45	Coffee break
11:15	Session: SiGe Dots II
	Yong-Wei Zhang Heteroepitaxial Growth on Nanowire and Nanoring surfaces: Instabilities and Ordered Quantum Structure Formation (invited) M. Grydlik Exploiting the interface between randomly nucleated and ordered dots for unrolling SiGe/Si dot properties on a micrometer scale G. M. Vanacore Epitaxial SiGe self-assembled island growth by Surface Thermal Diffusion on a flat and pit-patterned Si(100) surface M.-I. Richard X-ray diffraction to probe the structural properties of Ge nano-islands on nominal and nano-structured Si(001) substrates
12:30	Closing remarks from Leo Miglio

End of the conference

The Centro Volta's short guide to things to do and see in the Como area: Como, where conference is pleasure.