Tu sei qui: Home Sezioni Dipartimento Personale Docenti Emilio Scalise

Emilio Scalise

Ricercatore

Via Roberto Cozzi, 55
tel.: 
Riceve previo appuntamento.
e-mail: emilio.scalise@unimib.it

Curriculum Vitae

Education

 

2009-2013                               Ph.D. Researcher in Physics (Semiconductor Physics),

University of Leuven (Belgium).

Field of study: First-principles modeling of structural, vibrational and electronic properties of high-k dielectrics/high-mobility semiconductors heterostructures and (quasi) 2D materials.

 

2007–2009                              Master of Electronic Engineering,

University of Calabria (Italy).

Final degree mark: 110 (out of 110) cum laude

 

Professional positions

02.2014-11.2017 :                   Post-doc Research fellow.

Max-Planck-Institut für Eisenforschung,

Max-Planck-Straße 1

D-40237 Düsseldorf, Germany

12.2009-01/2014:                    Researcher.

K.U. Leuven,

Semiconductor Physics Section,

Celestijnenlaan 200d

B-3001 Leuven

02.2009-09.2009:                    Trainee.

IMEC,

Kapeldreef, 75

B-3001 Leuven.

 

Skills

  • Expert in modeling of structural, vibrational, electronic and interface properties of materials for semiconductor based applications , particularly in the field of Density Functional Theory and beyond, including hybrid functional (pbe0, HSE, etc. ), GW approximation and linear-response techniques.
  • Expert in modeling and simulation of (quasi) 2D materials
  • Expert in electrical measurements for nanoelectronic devices
  • Development and implementation of state-of-the art modeling approaches based on modern physics and chemistry concepts.
  • Expertise in electronic structure codes (Quantum Espresso, abinit, SIESTA,…)
  • Knowledge of micro-controllers.
  • Authors of several publications in international referee journals (see Publication list).
  • Successfully coordinated Master students projects.
  • Contributed to several reports and review of the project: “2DNANOLATTICES : A research project funded by the 7th Framework Program of the European Commission –Future and Emerging Technologies (FET)”

Didattica

Termodinamica Statistica Computazionale dei Solidi (2016-2017) together with Prof. Montalenti

Attività di Ricerca

--

Principali pubblicazioni

Articles in internationally reviewed academic journals


  • E. Scalise and M. Houssa. Predicting 2D silicon allotropes on SnS2NanoResearch 10, 1697 (2017).

 

  • van den Broek, B. ; Houssa, M.; Scalise, E.; Stesmans, A.; Geoffrey, P.; Afanas'ev, V.V. Two-dimensional hexagonal tin: ab initio geometry, stability, electronic structure and functionalization. 2D Mater. 1, 021004 (2014)

 

  • Scalise, E.; Houssa, M.; Cinquanta, E.; Grazianetti, C.; van den Broek, B.; Pourtois, G.; Stesmans, A.; Fanciulli, M.; Molle, A.  Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates. 2D Mater., 1,011010 (2014).

 

  • Chiappe, D.; Scalise, E.; Cinquanta, E.; Grazianetti, C.; van den Broek, B.; Fanciulli, M.;  Houssa, M.; Molle, A.  Two-Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface. Advanced Materials, 26, 2096-2101 (2014).

  • Scalise, E.; Cinquanta, E.; Grazianetti, C; B. Ealet; Houssa, M.; van den Broek, B.; Pourtois, G. Stesmans, A.; Afanas'ev, V.; M. Fanciulli; A. Molle. Vibrational properties of epitaxial silicene layers on (111) Ag. Applied Surface Science, 291, 113-117 (2013).

 

  • Cinquanta, E.; Scalise, E.; Chiappe, D.; Grazianetti, C.; van den Broek, B.; Houssa, M.;  Fanciulli, M.; Molle, A. Getting through the nature of silicene: sp2-sp3 two-dimensional silicon nanosheet, J. Phys. Chem. C, 2013, 117 (32), 16719.

  • Houssa, M.; van den Broek, B.; Scalise, E.; Ealet, B.; Pourtois, G.; Chiappe, D.; Cinquanta, E.;  Grazianetti, C.; Fanciulli, M.; Molle, A.; Afanas‘ev, V.V.; Stesmans, A. Theoretical aspects of graphene-like group IV semiconductors. Applied Surface Science, 291, 98-103 (2014).

  • Houssa, M.; van den Broek, B.; Scalise, E; Pourtois, G; Afanas'ev, VV; Stesmans, A. An electric field tunable energy band gap at silicene/(0001) ZnS interfaces. Phys Chem Chem Phys. 2013 Mar 21;15(11):3702-5

 

  • Scalise, E.; Houssa, M.; Pourtois, G; van den Broek, B. ; Afanas’ev, V. and Stesmans, A. Vibrational properties of silicene and germanene. Nano Research, 6(1),19-28 (2013).

 

 

 

 

 

  • Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.; Stesmans, A. Structural and vibrational properties of amorphous GeO2 from first-principles. Applied Physics Letters, 98 (20), 202110-1-202110-3 (2011).

 

 

 

Books

 

 

  • Scalise, E. , "Theoretical study of transition metal dichalcogenides" chapter in "2D Materials for Nanoelectronics" edited by M. Houssa, A. Dimoulas, A. Molle. Edition: Series in Materials Science and Engineering, Publisher: CRC Press (Taylor & Francis), ISBN: 9781498704175 (2016)

 

 

 

Talk presented at international scientific conferences

 

  • E. Scalise, M. Houssa, Predicting 2D silicon allotropes on layered chalcogenides, EMRS Spring Meeting, Strasbourg, France, May 22-26, 2017.

 

  • E. Scalise, S. Wippermann, G. Galli, D. Talapin, Tailoring the electronic properties of semiconducting nanocrystal-solids: InAs embedded in SnSx matrices, DPG-Frühjahrstagung, Dresden, March 19–24, 2017.

 

 

  • E. Scalise, S. Wippermann, G. Galli, D. Talapin, Tailoring the electronic properties of semiconducting nanocrystal-solids: InAs embedded in SnSx matrices, APS March Meeting 2017, New Orleans, Louisiana, March 13–17, 2017.

 

  • E. Scalise, S. Wippermann, G. Galli, D. Talapin, Probing the interface between semiconducting nanocrystals and molecular metal chalcogenide surface ligands: insights from first principles. APS March Meeting 2016, Baltimore, Maryland, March 14–18, 2016.

 

  • E. Scalise, S. Wippermann, G. Galli, D. Talapin, Probing the interface between semiconducting nanocrystals and molecular metal chalcogenide surface ligands: insights from first principles. 80. Jahrestagung der DPG und DPG-Frühjahrstagung, Regensburg, 6 – 11 March 2016.

 

 

  • E. Scalise, S. Wippermann, G. Galli, Nanointerfaces in InAs-Sn2S6 nanocrystal-ligand networks: atomistic and electronic structure from first principles. 79. Jahrestagung der DPG und DPG-Frühjahrstagung (79th Annual Meeting of the DPG and DPG Spring Meeting), Berlin, 15 - 20 March 2015.

 

  • E. Scalise, S. Wippermann, G. Galli, Nanointerfaces in InAs-Sn2S6 nanocrystal-ligand networks: atomistic and electronic structure from first principles. APS March Meeting 2015, San Antonio, Texas, March 2–6, 2015.

  • Emilio Scalise, Michel Houssa, Bas van den Broek, Eugenio Cinquanta, Daniele Chiappe, Alessandro Molle, Geoffrey Pourtois, Valery Afanasiev, Andre Stesmans, Theoretical study of 2D silicon nano-lattices, Superstripes Conference, Erice, Italy, July 25-31, 2014.

 

  • Houssa, M.; Scalise, E.; van den Broek, B.; Pourtois, G.; Afanas'ev, V.; Stesmans, A.,

Interaction of Germanene with (0001)ZnSe surface: a theoretical study,

ECS Fall Meeting. Boston (USA) October 27- November 1, 2013.

 

  • Molle, A.; Chiappe, D.; Cinquanta, E.; Grazianetti, C.; Fanciulli, M., Scalise, E.; van den Broek, B.; Houssa, M.,

Structural and chemical stabilization of epitaxial silicene,

ECS Fall Meeting. Boston (USA) October 27- November 1, 2013.

 

  • Emilio Scalise, Michel Houssa, Bas van den Broek, Eugenio Cinquanta, Daniele Chiappe, Alessandro Molle, Geoffrey Pourtois, Valery Afanasiev, Andre Stesmans, Theoretical study of silicene on non-metallic substrates with a hexagonal layer structure, EMRS Spring Meeting, Strasbourg, France, May 27-31, 2013.

 

  • Emilio Scalise, Eugenio Cinquanta, Daniele Chiappe, Carlo Grazianetti, Bas van den Broek, Michel Houssa, Marco Fanciulli, Alessandro Molle, Raman spectrum of epitaxial silicene, EMRS Spring Meeting, Strasbourg, France, May 27-31, 2013.

 

  • Eugenio Cinquanta, Emilio Scalise, Daniele Chiappe, Carlo Grazianetti, Bas van den Broek, Michel Houssa, Marco Fanciulli, Alessandro Molle, Raman spectrum of epitaxial silicene, MRS Spring Meeting, San Francisco, April 1-5, 2013

 

 

  • Houssa, M., Pourtois, G., Scalise, E., Afanas'ev, V., Stesmans, A. (2011). Theoretical study of Ge dangling bonds in GeO2 and correlation with ESR results at Ge/GeO2 interfaces. ECS Fall Meeting. Boston, USA, 9-14 October 2011. USA: The Electrochemical Society.

 

  • Houssa, M., Scalise, E., Sankaran, K., Pourtois, G., Afanas'ev, V., Stesmans, A. (2011). Hydrogenated silicene and germanene: A first-principles study. International Conference on Si epitaxy and Heterostructures. Leuven, Belgium, 28 August-1 September 2011.

 

Poster presented at international scientific conferences

  • E. Scalise, S. Wippermann, G. Galli, D. Talapin, Tailoring the electronic properties of semiconducting nanocrystal-solids: InAs embedded in SnSx matrices, EMRS Spring Meeting, Strasbourg, France, May 22-26, 2017.

 

 

  • Emilio Scalise, Stefan Wippermann, Giulia Galli , Nanointerfaces in semiconducting nanocomposites: atomistic and electronic structure from first principles.  PSI-K 2015 CONFERENCE, 6-10 September 2015, San Sebastian, Spain.

 

  • Stefan Wippermann, Emilio Scalise, Marton Voros, Adam Gali, Dario Rocca, Gergely Zimanyi, Francois Gygi, Giulia Galli , Semiconducting nanocomposites for use as light absorbers in multi-exciton generation solar cells: insights from ab initio calculations. PSI-K 2015 CONFERENCE, 6-10 September 2015, San Sebastian, Spain.