SiGe alloys are of fundamental and applicative interest due to their structural, chemical and electronic characteristics, for applications in microelectronics and photonics.
Spectroscopic apparatuses based on dispersive and FT spectrometers are used for photoluminescence, photoluminescence excitation, transmission and Raman measurements in the 0.4 - 5.0 eV spectral range. Raman spectroscopy can be operated down to 5 cm-1. Working temperatures: 2 K to 450 K. Sources: He-Ne, Ar, doubled-Ar, Ti-Sapphire, DPSS and Diode lasers, incandescent and high pressure lamps. A low temperature (4 K – 300 K) micro-photoluminescence and micro-Raman apparatus working in the 0.75 – 3.4 eV spectral range is available. Time resolved photoluminescence and photoluminescence decay down to 10-8 s can be measured with DPSS-QS lasers. Molecular-beam epitaxy for III-V semiconductors and AFM characterization.