Our research is mainly devoted to the experimental investigation of semiconductors, oxides, semiconductor/oxide interfaces, silicon and germanium nanostructures, MoS2 growth, for advanced and innovative nanoelectronic, spintronic, and neuroelectronic devices. The research activity is carried out in strong collaboration with the CNR-IMM, MDM Laboratory and leading semiconductor industries, Micron and STMicroelectronics.
Investigation of silicon/oxide, germanium/oxide interfaces using electrically detected magnetic resonance (EDMR) and inelastic electron tunneling spectroscopy (IETS).
In-situ investigation by EDMR of the early stages of oxidation and interface formation at the Si/oxide and Ge/oxide interfaces.
The electronic and spintronic properties of the following nanostructures
- Silicon nanowires produced by e-beam lithography and oxidation.
- Silicon nanowires produced by metal-assisted chemical etching (MACE)
Silicon and germanium nanowires and nanoclusters produced by CVD and MBE are investigated using mainly spin dependent transport techniques aiming at the characterization of shallow donors, electrostatically confined electrons, Coulomb blockade.
Growth and processing