Materials and Spectroscopies for Nanoelectronics and Spintronics MSNS Laboratory

Our research is mainly devoted to the experimental investigation of semiconductors, oxides, semiconductor/oxide interfaces, silicon and germanium nanostructures, MoS2 growth, for advanced and innovative nanoelectronic, spintronic, and neuroelectronic devices. The research activity is carried out in strong collaboration with the CNR-IMM, MDM Laboratory and leading semiconductor industries, Micron and STMicroelectronics.

Point defects in semiconductors and oxides

Study of the electronic properties of point defects in semiconductors (Si, Ge) and in high dielectric constant materials (transition metal oxides) using electron spin resonance techniques and inelastic electron tunneling spectroscopy.

Semiconductors/oxide interfaces

Investigation of silicon/oxide, germanium/oxide interfaces using electrically detected magnetic resonance (EDMR) and inelastic electron tunneling spectroscopy (IETS).
In-situ investigation by EDMR of the early stages of oxidation and interface formation at the Si/oxide and Ge/oxide interfaces.

Si and Ge nanostructures
Single Si nanowire (SiNW) produced by metal assisted chemical etching. As etched SiNWs are shown in the inset.

The electronic and spintronic properties of the following nanostructures  
- Silicon nanowires produced by e-beam lithography and oxidation.
- Silicon nanowires produced by metal-assisted chemical etching (MACE)
Silicon and germanium nanowires and nanoclusters produced by CVD and MBE are investigated using mainly spin dependent transport techniques aiming at the characterization of shallow donors, electrostatically confined electrons, Coulomb blockade.


Growth and characterization of TMDC (MoS2, WS2)
Optical image of MoS2. In the inset Raman spectra

TMDC are grown with a novel method and their properties characterized with Raman spectroscopy (Collaboration with E. Bonera) and electrical measurements.

Research Group

Research Lab

MSNS1 Lab – U5 Building, 1st Floor, Room 1043
MSNS2 Lab – U5 Building, 1st Floor, Room 1095

CW X-band EPR/EDMR systems at MSNS Lab

Growth and processing

  • Atomic Layer Deposition (ALD) mini-chamber with O3 line for in-situ characterization.
  • Horizontal and vertical furnaces for annealing and diffusion
  • Q-switched Ruby laser for laser annealing


  • Two CW X-band systems for electron spin resonance (ESR) spectroscopy, electrically detected spin resonance spectroscopy (EDMR) and electron nuclear double resonance spectroscopy (ENDOR). Variable temperature measurements (4-600 K).
  • Multi-frequency (0.1-40 GHz) EDMR
  • Set-up for inelastic electron tunnelling spectroscopy (IETS) working in the temperature range 4-300 K
  • Electrical: I-V, C-V, DLTS (20K-300K), Probe station