PEZZOLI FABIO

Role: 
Associate professor
Academic disciplines: 
EXPERIMENTAL PHYSICS (FIS/01)
Works in: 
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Telephone : 
0264485175
Room: 
U05, Piano: P01, Stanza: 1070
Via Roberto Cozzi 55 - 20125 MILANO

Teaching

A.A.: 2019/2020

  • SOLID STATE AND ELECTRONICS LABORATORY
  • PHYSICS II
  • MODERN PHYSICS II

A.A.: 2018/2019

  • GEOMETRIC AND OPHTHALMIC OPTICS AND LABORATORY
  • LABORATORY OF MATERIALS PHYSICS
  • MODERN PHYSICS II

A.A.: 2017/2018

  • GEOMETRIC AND OPHTHALMIC OPTICS AND LABORATORY
  • SOLID STATE AND ELECTRONICS LABORATORY II

A.A.: 2016/2017

  • PHYSICAL CHARACTERIZATION OF MATERIALS WITH LABORATORY
  • SOLID STATE AND ELECTRONICS LABORATORY II

Pubblicazioni

  • De Cesari, S., Balocchi, A., Vitiello, E., Jahandar, P., Grilli, E., Amand, T., et al. (2019). Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon. PHYSICAL REVIEW. B, 99(3). Detail
  • Pezzoli, F., Pedrini, J., Biagioni, P., Barzaghi, A., Ballabio, A., Bonera, E., et al. (2019). Optical properties of micron-sized crystals grown via 3D heteroepitaxy. Intervento presentato a: 2nd Joint ISTDM / ICSI 2019 Conference, 10th International SiGe Technology and Device Meeting (ISTDM), 12th International Conference on Silicon Epitaxy and Heterostructures (ICSI), Madison, USA. Detail
  • De Cesari, S., Balocchi, A., Vitiello, E., Jahandar, P., Amand, T., Marie, X., et al. (2019). Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon. Intervento presentato a: Joint ISTDM / ICSI 2019 Conference, 10th International SiGe Technology and Device Meeting (ISTDM), 12th International Conference on Silicon Epitaxy and Heterostructures (ICSI), Madison, USA. Detail
  • Marzo, A., Mahajneh, A., Mattavelli, S., Vitiello, E., Pezzoli, F., Bonera, E., et al. (2019). Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles. JOURNAL OF MATERIALS CHEMISTRY. C, 7(42), 13261-13266. Detail
  • Albani, M., Assali, S., Verheijen, M., Koelling, S., Bergamaschini, R., Pezzoli, F., et al. (2018). Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires. NANOSCALE, 10(15), 7250-7256. Detail