FANCIULLI MARCO

Role: 
Full professor
Academic disciplines: 
PHYSICS OF MATTER (FIS/03)
Works in: 
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Telephone : 
0264485034,0264485184
Room: 
U05, Piano: P01, Stanza: 1043
Via Roberto Cozzi 55 - 20125 MILANO
U05, Piano: P01, Stanza: 1067
Via Roberto Cozzi 55 - 20125 MILANO

Teaching

A.A.: 2019/2020

  • PHYSICAL CHARACTERIZATION OF MATERIALS WITH LABORATORY
  • PHYSICS OF SEMICONDUCTORS
  • PHYSICS AND TECHNOLOGY OF ELECTRONIC DEVICES WITH LABORATORY

A.A.: 2018/2019

  • PHYSICAL CHARACTERIZATION OF MATERIALS WITH LABORATORY
  • PHYSICS OF SEMICONDUCTORS
  • PHYSICS AND TECHNOLOGY OF ELECTRONIC DEVICES WITH LABORATORY
  • LABORATORY OF MATERIALS TECHNOLOGY I

A.A.: 2017/2018

  • PHYSICAL CHARACTERIZATION OF MATERIALS WITH LABORATORY
  • PHYSICS OF SEMICONDUCTORS
  • LABORATORY OF MATERIALS TECHNOLOGY I

A.A.: 2016/2017

  • ELECTRONIC DEVICES
  • PHYSICAL CHARACTERIZATION OF MATERIALS WITH LABORATORY
  • PHYSICS OF SEMICONDUCTORS
  • SURFACES AND INTERFACES

A.A.: 2015/2016

  • ELECTRONIC DEVICES
  • PHYSICAL CHARACTERIZATION OF MATERIALS WITH LABORATORY
  • PHYSICS OF SEMICONDUCTORS
  • SURFACES AND INTERFACES

Pubblicazioni

  • Marzo, A., Mahajneh, A., Mattavelli, S., Vitiello, E., Pezzoli, F., Bonera, E., et al. (2019). Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles. JOURNAL OF MATERIALS CHEMISTRY. C, 7(42), 13261-13266. Detail
  • Fanciulli, M. (2018). High-k dielectrics for CMOS and emerging logic devices. Intervento presentato a: TO-BE COST Action "Towards Oxide-Based Electronics" Sping Meeting 2018, Sant Feliu de Guíxols, Catalonia, Spain. Detail
  • Pinchetti, V., Anand, A., Akkerman, Q., Sciacca, D., Lorenzon, M., Meinardi, F., et al. (2018). Trap-Mediated Two-Step Sensitization of Manganese Dopants in Perovskite Nanocrystals. ACS ENERGY LETTERS, 4(1), 85-93. Detail
  • Locardi, F., Cirignano, M., Baranov, D., Dang, Z., Prato, M., Drago, F., et al. (2018). Colloidal Synthesis of Double Perovskite Cs2AgInCl6 and Mn-Doped Cs2AgInCl6 Nanocrystals. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 140(40), 12989-12995. Detail
  • Fanciulli, M. (2017). Investigation of the Si/SiO2 interface in silicon nanowires and its role in donor deactivation and charge transport. Intervento presentato a: Progress in Applied Surface, Interface and Thin Film Science 2017. SURFINT-SREN V, Firenze. Detail