Tuesday, 17th April 2018
h. 10.30 a.m.
Room U9-13, U9 Building – Viale dell’Innovazione 9, Milano
Lecturer: Katsumi Kishino – Faculty of Science and Technology, Department of Engineering and Applied Sciences, Sophia University, Japan
Title: Light Emitting Diode made of InGaN/GaN Nanocolumn Arrays
Abstract. We found that a regularly arranged InGaN/GaN nanocolumn array can be fabricated by RF-plasma-assisted Molecular Beam Epitaxy using Ti-mask selective-area growth (i.e. Ti-nanohole-patterned GaN templates on sapphire substrate). Dislocation density is minimized in nanocolumn with diameters below 250 nm. Green light emitting diodes made of InGaN/GaN nanocolumn arrays show a high photoluminescence efficiency which means good crystallinity of the arrays.