Our research is mainly devoted to the experimental investigation of semiconductors, oxides, and their interfaces, silicon and germanium nanostructures, MoS2, and magnetic thin films for advanced and innovative nanoelectronic, spintronic, and neuroelectronic devices. The research activity is carried out in strong collaboration with the CNR-IMM-MDM, leading European research institutions, and semiconductor industries, Micron and ST.
Study of the electronic properties of point defects in semiconductors (Si, Ge) and in high dielectric constant materials (transition metal oxides) and at their interfaces. Applications in quantum and unconventional computing (collaboration with Wilfred G. van der Wiel, UTwente).
The study of QD-based devices (colloidal nanoparticles of PbS, CdSe, CdS, Au) is carried out using charge and spin transport aiming at the understanding of strongly correlated few electrons/excitons systems and their possible applications, such as reservoir computing and quantum computing.
TMDC are grown with a novel patented method and their properties characterized with Raman spectroscopy (Collaboration with E. Bonera) and electrical measurements. Magnetic thin films deposited at CNR-MDM for spintronics are characterized with broad band FMR. (Collaboration with R. Mantovan and M. Belli, CNR-IMM).
Growth and processing