Materials and Spectroscopies for Nanoelectronics and Spintronics MSNS Laboratory


Our research is mainly devoted to the experimental investigation of semiconductors, oxides, and their interfaces, silicon and germanium nanostructures, MoS2, and magnetic thin films for advanced and innovative nanoelectronic, spintronic, and neuroelectronic devices. The research activity is carried out in strong collaboration with the CNR-IMM-MDM, leading European research institutions, and semiconductor industries, Micron and ST.

Point defects in semiconductors and oxides and at their interfaces

Study of the electronic properties of point defects in semiconductors (Si, Ge) and in high dielectric constant materials (transition metal oxides) and at their interfaces. Applications in quantum and unconventional computing (collaboration with Wilfred G. van der Wiel, UTwente).

Si Nanowires

The electronic and spintronic properties of Silicon nanowires produced by metal-assisted chemical etching (MACE) (collaboration with M. Belli, CNR-IMM) are investigated using mainly spin dependent transport techniques aiming at the characterization of shallow donors.

Quantum dots

The study of QD-based devices (colloidal nanoparticles of PbS, CdSe, CdS, Au) is carried out using charge and spin transport aiming at the understanding of strongly correlated few electrons/excitons systems and their possible applications, such as reservoir computing and quantum computing.


TDMC (MoS2, WS2) and magnetic thin films

Optical image of MoS2. In the inset Raman spectra

TMDC are grown with a novel patented method and their properties characterized with Raman spectroscopy (Collaboration with E. Bonera) and electrical measurements. Magnetic thin films deposited at CNR-MDM for spintronics are characterized with broad band FMR.  (Collaboration with R. Mantovan and M. Belli, CNR-IMM).

Microelectrodes for neurolectronics

Within the Neureka EU project ( deposition by ALD and characterization by impedance spectroscopy and noise of novel materials and structures for neuron stimulation and recording.

Research Group

Research Lab

MSNS1 Lab – U5 Building, 1st Floor, Room 1043
MSNS2 Lab – U5 Building, 1st Floor, Room 1095


CW X-band EPR/EDMR systems at MSNS Lab

Growth and processing

  • Atomic Layer Deposition (ALD) mini-chamber with O3 line for in-situ characterization.
  • Horizontal and vertical furnaces for annealing and diffusion
  • Q-switched Ruby laser for laser annealing


  • Three CW X-band systems for electron spin resonance (ESR), electrically detected spin resonance (EDMR), and electron nuclear double resonance (ENDOR). Variable temperature measurements (4-600 K).
  • Multi-frequency (0.1-40 GHz) EDMR and ferromagnetic resonance (FMR).
  • Inelastic electron tunneling spectroscopy (IETS) and deep level transient spectroscopy (DLTS) working in the temperature range 4-300 K.
  • Everbeing probe station. Keithley 4200 for I-V, C-V. Impedance Analyzer (1mHz-5MHz), Zurich Instruments MFIA. Impedance and Noise (IETS) working in the temperature range 4-300 K.
  • Electrical: I-V, C-V, DLTS (20K-300K), Probe station