International Projects
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4PHOTON-Novel Quantum Emitters monolithically grown on Si, Ge and III-V substrates
We propose to forge a partnership between the leading European groups working on the next generation of solid state quantum emitters based on novel growth methods such as Droplet Epitaxy. Future, practical Nano-photonics and Quantum Circuits applications demand semiconductor quantum… Read more dots that can be grown on substrates with different lattice parameters (Si, Ge, GaAs), different substrate orientations (such as (001) and (111)) and tuneable optical, electrical and spin properties. All these requirements are met by high quality quantum dots grown with Droplet based Epitaxy techniques, circumventing the limitations of currently available systems based on strain-driven dot self-assembly. This vast novel research area at the crossroads of photonics, material science, quantum physics and nano-scale device fabrication will allow delivering top level multidisciplinary training to 15 early stage researcher (ESRs). The successful training of the ESRs by leading academic and 3 full industrial partners will be crucial for achieving the headline goals of this first ever consortium on droplet dot devices: (1) Entangled light emitting diodes with droplet dots grown on (111) substrates (2) Electrically triggered, droplet dot based single photon sources on Si/Ge substrates (3) Strain tuning in droplet dots without wetting layer: photon polarization and single spin control (4) Droplet Dot based single photon sources for non- classical light storage devices based on hybrid quantum systems (dots & laser-cooled atoms). The training and research progress will be discussed and monitored during the 4 project meetings, 3 summer schools and the final international conference on Droplet Dot Devices, all of which are open to the whole scientific community. We expect this network, based on the solid collaboration between growth groups, microscopists, quantum optics experimentalists and theorists to explore the full potential of this emerging technology.
7th International Workshop on Characterization and Modeling of Memory Devices (IWCM)
A new course on the Physics and technology of semiconductor devices with hand-on activity in a characterization and simulation lab
CHALLENGE- 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates for sustaiNable wide-band-Gap powEr devices
HTEPV- Novel hybrid thermoelectric photovoltaic devices: modeling, development, and characterization
KIC - SPARK-Substitution and recycling of critical elements in materials for ionizing radiation detection
KiC- QM-FORMa -Designing New Materials with Quantum Mechanics
NANOthermMA- Advanced Simulation Design of Nanostructured Thermoelectric Materials with Enhanced Power
Factors
AIDA 2020-Advanced European Infrastructures for Detectors at Accelerators
ASCIMAT- Increasing the scientific excellence and innovation capacity in Advanced Scintillation Materials of the Institute of Physics from the Czech Academy of Sciences
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