Optical spectroscopy of semiconductors

Our research is mainly devoted to the experimental study of the optical properties of both group IV and group III-V semiconductors and quantum structures of interest for micro- and opto-electronics. Most of our research is carried out in within the L-NESS interuniversity Centre.

SiGeSn Heterostructures

analisi di un circuito stampato al microscopio

SiGeSn alloys are of fundamental and applicative interest due to their structural, chemical and electronic characteristics, for applications in photonics, spintronics and quantum technologies.

  • Using Raman and photoluminescence we study the correlations between growth conditions and system properties. We analyse the effects of strain, composition and dimensionality on the vibrational and electronic properties of the heterostructures.
  • The vibrational properties of SiGeSn nanostructures, mainly quantum dots, are currently under study by micro-Raman measurements.
  • The electronic properties of Ge-based quantum wells are studied by transmission and photoluminescence measurements in a wide temperature range.
  • Spin-dependent phenomena are investigated in Sn-based materials through magnetooptical investigations.
  • The emergence of topological phase transitions is addressed in Sn-rich heterostructures through light-matter interaction.

Semiconductor quantum nanostructures

Amongst the nanoscience advancements, relevant place is taken by quantum confinement effects that take place in semiconductor quantum dots (QDs). Like the natural atoms QDs show discrete energy levels. Laser, infrared photodetectors, as well as third generation photovoltaic cells show can be improved by the use of QDs in the active layer. The study of QD-based devices has provided new ways for the understanding of strongly correlated few electrons/excitons systems and their possible applications, such as single-electron devices and single photon emitters for quantum cryptography and computation.

  • We study the nanostructure properties via spectroscopic measurements addressing electronic structure and carrier relaxation mechanisms;
  • We study the implementation of the QD devices on Si photonics.

Research Team

Research Lab

U5 Building, Ground Floor, Room T070A
U5 Building, 1st Floor, Room 1066-1069-1073-1075


Spectroscopic apparatuses based on dispersive and FT spectrometers are used for photoluminescence, photoluminescence excitation, transmission and Raman measurements in the 0.4 - 5.0 eV spectral range. Raman spectroscopy can be operated down to 5 cm-1. Working temperatures: 2 K to 450 K. Sources: He-Ne, Ar, doubled-Ar, Ti-Sapphire, DPSS and Diode lasers, incandescent and high pressure lamps. A low temperature (4 K – 300 K) micro-photoluminescence and micro-Raman apparatus working in the 0.75 – 3.4 eV spectral range is available. Time resolved photoluminescence and photoluminescence decay down to 10-8 s can be measured with DPSS-QS lasers.