Thick does the trick: Ferroelectricity in two-dimensional (GeTe)m(Sb2Te3)n lamellae
The ternary Ge-Sb-Te alloys (GST) are employed as active material in non-volatile phase-change memory devices, which exploit the large difference in both electrical and optical properties between the amorphous and crystalline phases and the possibility to thermally induce a fast and reversible transition between the two phases. Recently, this technology has attracted great attention for the possible exploitation in neuromorphic computing.