Optimization of electronic and functional properties in MoS2 films by controlled introduction of sulfur atomic vacancies
Transition Metal Dichalcogenides (TMDs) are a versatile class of materials with immense potential for fields of application, from nanoelectronics and optics to sensing and catalysis. TMDs are inherently imperfect, containing defects such as vacancies and boundaries that significantly impact on their properties. Defects are often considered detrimental due to their negative effects on some materials’ properties like mechanical and chemical stability, or alterations in electrical transport.