Martedì 17 aprile 2018
Ore 10.30
Aula U9-13, Edificio U9 – Viale dell’Innovazione 9, Milano
Relatore: Katsumi Kishino – Faculty of Science and Technology, Department of Engineering and Applied Sciences, Sophia University, Japan
Titolo: Light Emitting Diode made of InGaN/GaN Nanocolumn Arrays
Abstract. We found that a regularly arranged InGaN/GaN nanocolumn array can be fabricated by RF-plasma-assisted Molecular Beam Epitaxy using Ti-mask selective-area growth (i.e. Ti-nanohole-patterned GaN templates on sapphire substrate). Dislocation density is minimized in nanocolumn with diameters below 250 nm. Green light emitting diodes made of InGaN/GaN nanocolumn arrays show a high photoluminescence efficiency which means good crystallinity of the arrays.